? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c55 v v dgr t j = 25 c to 175 c, r gs = 1m 55 v v gsm transient 20 v i d25 t c = 25 c 280 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 600 a i a t c = 25 c40 a e as t c = 25 c 1.5 j p d t c = 25 c 550 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c plastic body for 10 seconds 260 c m d mounting torque (to-247)(to-3p) 1.13 / 10 nm/lb.in. weight to-247 6.0 g to-3p 5.5 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 55 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 5 a v gs = 0v t j = 150 c 250 a r ds(on) v gs = 10v, i d = 50a , notes 1, 2 2.6 3.2 m trenchmv tm power mosfet n-channel enhancement mode avalanche rated ixth280 n055t ixtq280 n055t v dss = 55v i d25 = 280a r ds(on) 3.2m ds99630a(07/08) g = gate d = drain s = source tab = drain to-3p (ixtq) to-247 (ixth) s (tab) (tab) features international standard packages 175c operating temperature avalanche rated low r ds(on) advantages easy to mount space savings high power density applications automotive - motor drives - high side switch - 12v battery - abs systems dc/dc converters and off-line ups primary - side switch high current switching applications g d s g d
ixys reserves the right to change limits, test conditions, and dimensions. IXTH280N055T ixtq280n055t symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a , note 1 60 107 s c iss 9700 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 1540 pf c rss 265 pf t d(on) 32 ns t r 55 ns t d(off) 49 ns t f 37 ns q g(on) 200 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 50 nc q gd 53 nc r thjc 0.27 c/w r thch (to-247)(to-3p) 0.25 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 280 a i sm repetitive, pulse width limited by t jm 600 a v sd i f = 50a, v gs = 0v, note 1 1.0 v t rr 54 ns notes: 1. pulse test, t 300 s; duty cycle, d 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 50a r g = 3.3 (external) i f = 140a, v gs = 0v -di/dt = 100a/ s, v r = 25v ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 e ? p to-247 (ixth) outline 1 2 3 terminals: 1 - gate 2 - drain to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain
? 2008 ixys corporation, all rights reserved IXTH280N055T ixtq280n055t fig. 1. output characteristics @ 25oc 0 40 80 120 160 200 240 280 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 5v 6v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 5v 6v fig. 3. output characteristics @ 150oc 0 40 80 120 160 200 240 280 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ds - volts i d - amperes 7v v gs = 10v 9v 8v 5v 6v fig. 4. r ds(on) normalized to i d = 140a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 280a i d = 140a fig. 5. r ds(on) normalized to i d = 140a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXTH280N055T ixtq280n055t ixys ref: t_280n055t(6v)8-05-08-a fig. 7. input admittance 0 25 50 75 100 125 150 175 200 225 250 33.544.555.5 66.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 200 225 250 275 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 300 330 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v gs - volts v ds = 27.5v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2008 ixys corporation, all rights reserved ixys ref: t_280n055t(6v)8-05-08-a IXTH280N055T ixtq280n055t fig. 14. resistive turn-on rise time vs. drain current 20 25 30 35 40 45 50 55 60 24 26 28 30 32 34 36 38 40 42 44 46 48 50 i d - amperes t r - nanoseconds r g = 3.3 v gs = 10v v ds = 27.5v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 200 2 4 6 8 10 12 14 16 18 20 r g - ohms t r - nanoseconds 30 35 40 45 50 55 60 65 70 75 80 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 27.5v i d = 50a i d = 25a fig. 16. resistive turn-off switching times vs. junction temperature 35 37 39 41 43 45 47 49 51 53 55 57 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 40 45 50 55 60 65 70 75 80 85 90 95 t d ( o f f ) - nanoseconds t f t d(off ) - - - - r g = 3.3 , v gs = 10v v ds = 27.5v i d = 25a i d = 50a fig. 17. resistive turn-off switching times vs. drain current 30 33 36 39 42 45 48 51 54 57 24 26 28 30 32 34 36 38 40 42 44 46 48 50 i d - amperes t f - nanoseconds 45 50 55 60 65 70 75 80 85 90 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 , v gs = 10v v ds = 27.5v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 15 20 25 30 35 40 45 50 55 60 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 3.3 v gs = 10v v ds = 27.5v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 40 60 80 100 120 140 160 180 200 220 240 2 4 6 8 10 12 14 16 18 20 r g - ohms t f - nanoseconds 70 100 130 160 190 220 250 280 310 340 370 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 27.5v i d = 50a i d = 25a
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